HTRB 782 - HIGH TEMPERATURE REVERSE BIAS
- Life cycle testing of IGBT and MOSFET-moduls and diodes according to DIN 60747 or AQG 324
- Testing of individual components and half bridges
- Reverse voltage control
- Reverse current control
- Temperature measurement and control
Features
- Positive and negative DUT connections for testing half bridges
- Reverse voltage generator up to ± 2 kV at max. 1 A
- Reverse current measurement up to
- 2x9 channels with max. 100 mA or
- 2x6 channels with max. 150 mA or
- 2x3 channels with max. 300 mA
- Temperature measurement and control on 9 test stations
- 2x9 Gate voltage up to -20 V at max. 20 mA
- PLC for controlling and monitoring lifecycle tests according to DIN 60747 or AQG 324
Description
With the help of the HTRB 782 test system, the behaviour of DIODE, IGBT and MOS modules with reverse voltage applied at max. junction temperature the components are examined in an endurance test.
The system has the following essential functional features:
- Reverse voltage generators with up to ± 2,000 V at a maximum peak current of 1 A
- Reverse current measurement on up to
2x9 channels with max. 100 mA reverse current, or on
2x6 channels with max. 150 mA or on
2x3 channels with 300 mA
- Temperature measurement and control on 9 test stations
- 2x9 Gate voltage sources with voltages down to -20 V at maximum gate currents up to 20 mA.
- Measuring current sources and voltage measurement for temperature measurement and control via integrated diode of the test object
- Control for the automatic execution of endurance tests and recording of the data incl. limit value monitoring for current consumption, temperature profile and gate data
- Incl. Network interface for remote viewing of the test results