HTRB 782 - HIGH TEMPERATURE REVERSE BIAS
- Lebensdauertests bei IGBT- und MOSFET-Modulen sowie Dioden
- Test von Einzelbauteilen und Halbbrücken
- Sperrspannungsüberprüfung
- Sperrstromüberprüfung
- Temperaturmessung und - Regelung
Features
- Positive und negative Prüflingsanschlüsse zur Prüfung von Halbbrücken
- Sperrspannungsgenerator bis 2 kV bei max. 1 A
- Sperrstrommessung an bis zu 9 Kanälen mit max. 100 mA oder 6 Kanälen mit max. 150 mA oder 3 Kanälen mit 300 mA
- Temperaturmessung und -regelung an 9 Prüfplätzen
- Gate-Spannungen bis -20 V bei max. 20 mA
Data Sheet
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Description
With the help of the HTRB 782 test system, the behaviour of DIODE, IGBT and MOS modules with reverse voltage applied at max. junction temperature the components are examined in an endurance test.
The system has the following essential functional features:
Reverse voltage generators with up to ± 2,000 V at a maximum peak current of 1 A
Reverse current measurement on up to
2x9 channels with max. 100 mA reverse current, or on
2x6 channels with max. 150 mA or on
2x3 channels with 300 mA
Temperature measurement and control on 9 test stations
2x9 Gate voltage sources with voltages down to -20 V at maximum gate currents up to 20 mA.
Measuring current sources and voltage measurement for temperature measurement and control via integrated diode of the test object
Control for the automatic execution of endurance tests and recording of the data incl. limit value monitoring for current consumption, temperature profile and gate data
Incl. Network interface for remote viewing of the test results